| PART |
Description |
Maker |
| M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| EDD12322GBH-7FTS-F EDD12322GBH-6ETS-F EDD12322GBH- |
128M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range)
128M bits DDR Mobile RAM WTR (Wide Temperature Range)
128M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range)
|
Elpida Memory
|
| EDL1216CFBJ-75-F |
128M bits Mobile RAM
|
Elpida Memory
|
| MX25L12845EZNI10G MX25L12845E14 MX25L12845EMI10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K3N9VU4000A-GC |
128M-Bit (8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| MBM29XL12DF-70 MBM29XL12DF-80 |
PAGE MODE FLASH MEMORY CMOS 128M BIT 页面模式闪存的CMOS 128M的钻
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| MBM29XL12DF-80 MBM29XL12DF MBM29XL12DF-70 E520901 |
From old datasheet system
PAGE MODE FLASH MEMORY CMOS 128M BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| UPD4616112F9-B85LX-BC2 UPD4616112F9-B95LX-BC2 UPD4 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
|
| UPD4632312AF9-BE85X-BC2 UPD4632312AF9-BE75X-BC2 UP |
32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 32兆位CMOS移动指明内存200万字6位温度范
CONNECTOR ACCESSORY
|
NEC, Corp.
NEC Corp.
|
